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? semiconductor components industries, llc, 2010 august, 2010 ? rev. 0 1 publication order number: ncp3337/d ncp3337 ultra high accuracy, low iq, 500 ma with power good low dropout regulator the ncp3337 is a high performance, low dropout regulator. with accuracy of 0.9% over line and load and ultra ? low quiescent current and noise it encompasses all of the necessary features required by today?s consumer electronics. this unique device is guaranteed to be stable without a minimum load current requirement and stable with any type of capacitor as small as 1.0 f. the ncp3337 also comes equipped with sense and noise reduction pins to increase the overall utility of the device. the ncp3337 offers reverse bias protection. features ? high accuracy over line and load ( 0.9% at 25 c) ? ultra ? low dropout voltage at full load (260 mv typ) ? no minimum output current required for stability ? low noise (33 vrms w/10 nf c nr and 52 vrms w/out c nr ) ? low shutdown current (< 1 ma) ? reverse bias protected ? 2.9 v to 12 v supply range ? thermal shutdown protection ? current limitation ? requires only 1.0 f output capacitance for stability ? stable with any type of capacitor (including mlcc) ? available in 1.8 v, 2.5 v, 3.3 v, 5.0 v and adjustable output voltages ? power good output ? these are pb ? free devices applications ? pcmcia card ? cellular phones ? camcorders and cameras ? networking systems, dsl/cable modems ? cable set ? top box ? mp3/cd players ? dsp supply ? displays and monitors see detailed ordering, marking and shipping information in the package dimensions section on page 15 of this data sheet. ordering information marking diagram http://onsemi.com xxx = specific device marking a = assembly location l = wafer lot y = year w = work week = pb ? free package dfn10 mn suffix case 485c p3337 xxx alyw 1 pin 1, 2. v out 3. sense / adj 4. gnd 5. pwrg 6. nc 7. nr 8. sd 9, 10. v in ep, gnd (note: microdot may be in either location)
ncp3337 http://onsemi.com 2 figure 1. typical fixed version application schematic v in v out c in 1.0 f c out 1.0 f out sense out in in nr 3 2 1 9 10 (optional) 54 + + 7 gnd c nr pwrg pwrg r1 100k on off sd nc 6 8 ep ep figure 2. typical adjustable version application schematic v in v out c in 1.0 f c out 1.0 f out adj out in in nr 3 2 1 9 10 54 + + 7 gnd c nr (optional) pwrg pwrg r1 100k on off sd nc 6 8 ep ep r2 r3
ncp3337 http://onsemi.com 3 figure 3. block diagram, adjustable output version current and thermal protection circuit series pass element with reverse bias protection error amplifier comp. voltage reference enable block pwrg vout adj vin sd nr gnd ncp3337 adjustable current and thermal protection circuit series pass element with reverse bias protection error amplifier comp. voltage reference enable block pwrg vout sense vin sd nr gnd ncp3337 fix figure 4. block diagram, fixed output version
ncp3337 http://onsemi.com 4 pin function description pin no. pin name description 1, 2 v out regulated output voltage. bypass to ground with c out 1.0 f 3 sense/adj for output voltage sensing, connect to pins 1 and 2.at fixed output voltage version adjustable pin at adjustable output version 4 gnd power supply ground 5 pwrg power good 6 nc not connected 7 nr noise reduction pin. this is an optional pin used to further reduce noise. 8 sd shutdown pin. when not in use, this pin should be connected to the input pin. 9, 10 v in power supply input voltage epad epad exposed thermal pad should be connected to ground. maximum ratings rating symbol value unit input voltage v in ? 0.3 to +16 v output voltage v out ? 0.3 to v in +0.3 or 10 v* v pwrg pin voltage v pwrg ? 0.3 to +16 v shutdown pin voltage v sh ? 0.3 to +16 v junction temperature range t j ? 40 to +150 c storage temperature range t stg ? 50 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. note: this device series contains esd protection and exceeds the following tests: human body model (hbm) jesd 22 ? a114 ? b machine model (mm) jesd 22 ? a115 ? a *which ever is less. reverse bias protection feature valid only if (v out ? v in ) 7 v. thermal characteristics characteristic test conditions (typical value) unit min pad board (note 1) 1 pad board (note 1) junction ? to ? air, ja 215 66 c/w junction ? to ? pin, j ? l4 58 18 c/w 1. as mounted on a 35 x 35 x 1.5 mm fr4 substrate, with a single layer of a specified copper area of 2 oz (0.07 mm thick) copper traces and heat spreading area. jedec 51 specifications for a low and high conductivity test board recommend a 2 oz copper thickness. t est cond itions are under natural convection or zero air flow.
ncp3337 http://onsemi.com 5 electrical characteristics ? 1.8 v (v out = 1.8 v typical, v in = 2.9 v, t a = ? 40 c to +85 c, unless otherwise noted, note 2) characteristic symbol min typ max unit output voltage (accuracy) v in = 2.9 v to 5.8 v, i load = 0.1 ma to 500 ma, t a = 25 c v out ? 0.9% 1.783 1.8 +0.9% 1.817 v output voltage (accuracy) v in = 2.9 v to 5.8 v, i load = 0.1 ma to 500 ma, t a = 0 c to +85 c v out ? 1.4% 1.774 1.8 +1.4% 1.826 v output voltage (accuracy) v in = 2.9 v to 5.8 v, i load = 0.1 ma to 500 ma, t a = ? 40 c to +125 c v out ? 1.5% 1.773 1.8 +1.5% 1.827 v minimum input voltage v inmin 2.9 v line regulation v in = 2.9 v to 12 v, i load = 0.1 ma line reg 0.04 mv/v load regulation v in = 2.9 v, i load = 0.1 ma to 500 ma load reg 0.04 mv/ma dropout voltage (see figure 9) i load = 500 ma (notes 3, 4) i load = 300 ma (notes 3, 4) i load = 50 ma (notes 3, 4) v do 620 230 95 mv peak output current (see figures 14 and 17) i pk 500 700 830 ma short output current (see figure 14) v in < 7 v, t a = 25 c i sc 900 ma thermal shutdown / hysteresis t j 160/10 c ground current in regulation i load = 500 ma (note 3) i load = 300 ma (note 3) i load = 50 ma i load = 0.1 ma in dropout v in = 2.2 v, i load = 0.1 ma in shutdown v sd = 0 v i gnd i gndsh 9.0 4.6 0.8 ? 14 7.5 2.5 220 500 1.0 ma a a a output noise c nr = 0 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f c nr = 10 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f v noise 52 33 vrms vrms power good voltage low threshold hysteresis high threshold v elft 93 95 2 97 99 % of v out power good pin voltage saturation (i ef ? 1.0 ma) v efdo 200 mv power good pin leakage i efleak 1.0 a power good blanking time (note 7) t ef 50 s shutdown threshold voltage on threshold voltage off v sd 2.0 0.4 v v sd input current, v sd = 0 v to 0.4 v or v sd = 2.0 v to v in i sd 0.07 1.0 a output current in shutdown mode, v out = 0 v i osd 0.07 1.0 a reverse bias protection, current flowing from the output pin to gnd (v in = 0 v, v out_forced = 1.8 v) i outr 10 a 2. performance guaranteed over the operating temperature range by design and/or characterization, production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 3. t a must be greater than 0 c. 4. maximum dropout voltage is limited by minimum input voltage v in = 2.9 v recommended for guaranteed operation.
ncp3337 http://onsemi.com 6 electrical characteristics ? 2.5 v (v out = 2.5 v typical, v in = 2.9 v, t a = ? 40 c to +85 c, unless otherwise noted, note 5) characteristic symbol min typ max unit output voltage (accuracy) v in = 2.9 v to 6.5 v, i load = 0.1 ma to 500 ma, t a = 25 c v out ? 0.9% 2.477 2.5 +0.9% 2.523 v output voltage (accuracy) v in = 2.9 v to 6.5 v, i load = 0.1 ma to 500 ma, t a = 0 c to +85 c v out ? 1.4% 2.465 2.5 +1.4% 2.535 v output voltage (accuracy) v in = 2.9 v to 6.5 v, i load = 0.1 ma to 500 ma, t a = ? 40 c to +125 c v out ? 1.5% 2.462 2.5 +1.5% 2.538 v minimum input voltage v inmin 2.9 v line regulation v in = 2.9 v to 12 v, i load = 0.1 ma line reg 0.04 mv/v load regulation v in = 2.9 v, i load = 0.1 ma to 500 ma load reg 0.04 mv/ma dropout voltage (see figure 10) i load = 500 ma (note 6) i load = 300 ma (note 6) i load = 50 ma i load = 0.1ma v do 340 230 110 10 mv peak output current (see figures 14 and 18) i pk 500 700 800 ma short output current (see figure 14) v in < 7 v, t a = 25 c i sc 900 ma thermal shutdown / hysteresis t j 160/10 c ground current in regulation i load = 500 ma (note 6) i load = 300 ma (note 6) i load = 50 ma i load = 0.1 ma in dropout v in = 2.4 v, i load = 0.1 ma in shutdown v sd = 0 v i gnd i gndsh 9.0 4.6 0.8 ? 14 7.5 2.5 220 500 1.0 ma a a a output noise c nr = 0 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f c nr = 10 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f v noise 56 35 vrms vrms power good voltage low threshold hysteresis high threshold v elft 93 95 2 97 99 % of v out power good pin voltage saturation (i ef ? 1.0 ma) v efdo 200 mv power good pin leakage i efleak 1.0 a power good blanking time (note 7) t ef 50 s shutdown threshold voltage on threshold voltage off v sd 2.0 0.4 v v s d input current, v sd = 0 v to 0.4 v or v sd = 2.0 v to v in i sd 0.07 1.0 a output current in shutdown mode, v out = 0 v i osd 0.07 1.0 a reverse bias protection, current flowing from the output pin to gnd (v in = 0 v, v out_forced = 2.5 v) i outr 10 a 5. performance guaranteed over the operating temperature range by design and/or characterization, production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 6. t a must be greater than 0 c. 7. can be disabled per customer request.
ncp3337 http://onsemi.com 7 electrical characteristics ? 3.3 v (v out = 3.3 v typical, v in = 3.7 v, t a = ? 40 c to +85 c, unless otherwise noted, note 8) characteristic symbol min typ max unit output voltage (accuracy) v in v in = 3.7 v to 7.3 v, i load = 0.1 ma to 500 ma, t a = 25 c v out ? 0.90% 3.27 3.3 0.90% 3.33 v output voltage (accuracy) v in = 3.7 v to 7.3 v, i load = 0.1 ma to 500 ma, t a = 0 c to +85 c v out ? 1.40% 3.254 3.3 1.40% 3.346 v output voltage (accuracy) v in = 3.7 v to 7.3 v, i load = 0.1 ma to 500 ma, t a = ? 40 c to +125 c v out ? 1.50% 3.325 3.3 1.50% 3.35 v line regulation v in = 3.7 v to 12 v, i load = 0.1 ma line reg 0.04 mv/v load regulation v in = 3.7 v, i load = 0.1 ma to 500 ma load reg 0.04 mv/ma dropout voltage i load = 500 ma i load = 300 ma i load = 50 ma i load = 0.1 ma v do 340 230 110 10 mv peak output current (see figure 14) i pk 500 700 800 ma short output current (see figure 14) v in < 7 v, t a = 25 c i sc 900 ma thermal shutdown / hysteresis t j 160/10 c ground current in regulation i load = 500 ma (note 8) i load = 300 ma i load = 50 ma i load = 0.1 ma in dropout v in = 3.7 v, i load = 0.1 ma in shutdown v sd = 0 v i gnd i gndsh 9 4.6 0.8 ? 14 7.5 2.5 220 500 1 ma a a a output noise c nr = 0 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f c nr = 10 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f v noise 69 46 vrms power good voltage low threshold hysteresis high threshold v elft 93 95 2 97 99 % of v out power good pin voltage saturation (i ef = 1.0 ma) v efdo 200 mv power good pin leakage i efleak 1 a power good blanking time (note 9) t ef 50 s shutdown threshold voltage on threshold voltage off v sd 2 0.4 v sd input current, v sd = 0 v to 0.4 v or v sd = 2.0 v to v in i sd 0.07 1 a output current in shutdown mode, v out = 0 v i osd 0.07 1 a reverse bias protection, current flowing from the output pin to gnd (v in = 0 v, v out_forced = 3.3 v) i outr 10 a 8. performance guaranteed over the operating temperature range by design and/or characterization, production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 9. can be disabled per customer request.
ncp3337 http://onsemi.com 8 electrical characteristics ? 5 v (v out = 5.0 v typical, v in = 5.4 v, t a = ? 40 c to +85 c, unless otherwise noted, note 10) characteristic symbol min typ max unit output voltage (accuracy) v in v in = 5.4 v to 7.3 v, i load = 0.1 ma to 500 ma, t a = 25 c v out ? 0.90% 4.955 5 0.90% 5.045 v output voltage (accuracy) v in = 5.4 v to 7.3 v, i load = 0.1 ma to 500 ma, t a = 0 c to +85 c v out ? 1.40% 4.93 5 1.40% 5.07 v output voltage (accuracy) v in = 5.4 v to 7.3 v, i load = 0.1 ma to 500 ma, t a = ? 40 c to +125 c v out ? 1.50% 4.925 5 1.50% 5.075 v line regulation v in = 5.4 v to 12 v, i load = 0.1 ma line reg 0.04 mv/v load regulation v in = 5.4 v, i load = 0.1 ma to 500 ma load reg 0.04 mv/ma dropout voltage i load = 500 ma i load = 300 ma i load = 50 ma i load = 0.1 ma v do 340 230 110 10 mv peak output current (see figure 14) i pk 500 700 830 ma short output current (see figure 14) v in < 7 v, t a = 25 c i sc 930 ma thermal shutdown / hysteresis t j 160/10 c ground current in regulation i load = 500 ma (note 10) i load = 300 ma i load = 50 ma i load = 0.1 ma in dropout v in = 3.2 v, i load = 0.1 ma in shutdown v sd = 0 v i gnd i gndsh 9 4.6 0.8 ? 14 7.5 2.5 220 500 1 ma a a a output noise c nr = 0 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f c nr = 10 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f v noise 93 58 vrms power good voltage low threshold hysteresis high threshold v elft 93 95 2 97 99 % of v out power good pin voltage saturation (i ef = 1.0 ma) v efdo 200 mv power good pin leakage i efleak 1 a power good blanking time (note 11) t ef 50 s shutdown threshold voltage on threshold voltage off v sd 2 0.4 v sd input current, v sd = 0 v to 0.4 v or v sd = 2.0 v to v in i sd 0.07 1 a output current in shutdown mode, v out = 0 v i osd 0.07 1 a reverse bias protection, current flowing from the output pin to gnd (v in = 0 v, v out_forced = 5 v) i outr 10 a 10. performance guaranteed over the operating temperature range by design and/or characterization, production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 11. can be disabled per customer request.
ncp3337 http://onsemi.com 9 electrical characteristics ? adjustable (v out = 1.25 v typical, v in = 2.9 v, t a = ? 40 c to +85 c, unless otherwise noted, note 12) characteristic symbol min typ max unit reference voltage (accuracy) v in = 2.9 v to v out +4.0 v, i load = 0.1 ma to 500 ma, t a = 25 c v ref ? 0.90% 1.239 1.25 0.90% 1.261 v reference voltage (accuracy) v in = 2.9 v to v out + 4.0 v, i load = 0.1 ma to 500 ma, t a = 0 c to +85 c v ref ? 1.40% 1.233 1.25 1.40% 1.268 v reference voltage (accuracy) v in = 2.9 v to v out + 4.0 v, i load = 0.1 ma to 500 ma, t a = ? 40 c to +125 c v ref ? 1.50% 1.231 1.25 1.50% 1.269 v line regulation v in = 2.9 v to 12 v, i load = 0.1 ma line reg 0.04 mv/v load regulation v in = 2.9 v to 12 v, i load = 0.1 ma to 500 ma load reg 0.04 mv/ma dropout voltage (v out = 2.5 v ? 10 v) i load = 500 ma i load = 300 ma i load = 50 ma i load = 0.1 ma v do 340 230 110 10 mv peak output current (see figure 14) i pk 500 700 830 ma short output current (see figure 14) v in < 7 v, t a = 25 c v out 3.3 v v out > 3.3 v i sc 900 930 ma thermal shutdown / hysteresis t j 160/ 10 c ground current in regulation i load = 500 ma (note 12) i load = 300 ma i load = 50 ma i load = 0.1 ma in dropout vin = v out + 0.1 v or 2.9 v (whichever is higher), i load = 0.1 ma in shutdown v sd = 0 v i gnd i gndsh 9 4.6 0.8 14 7.5 2.5 220 500 1 ma a a a output noise c nr = 0 nf, i load = 500 ma, f = 10 hz to 100 khz, cout = 10 f c nr = 10 nf, i load = 500 ma, f = 10 hz to 100 khz, cout = 10 f v noise 69 46 v rms power good voltage low threshold hysteresis high threshold v elft 93 95 2 97 99 % of v out power good pin voltage saturation (i ef = 1.0 ma) v efdo 200 mv power good pin leakage i efleak 1 a power good pin blanking time (note 13) t ef 50 s shutdown threshold voltage on threshold voltage off v sd 2 0.4 v sd input current, v sd = 0 v to 0.4 v or v sd = 2.0 v to v in v in 5.4 v v in > 5.4 v i sd 0.07 1 5 a output current in shutdown mode, v out = 0 v i osd 0.07 1 a reverse bias protection, current flowing from the output pin to gnd (v in = 0 v, v out_forced = v out (nom) 7 v) i outr 1 a 12. performance guaranteed over the operating temperature range by design and/or characterization, production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 13. can be disabled per customer request.
ncp3337 http://onsemi.com 10 t a , temperature ( c) v out , output voltage (v) figure 5. output voltage vs. temperature 1.8 v version v out = 1.8 v t a , temperature ( c) v out , output voltage (v) figure 6. output voltage vs. temperature 2.5 v version v out = 2.5 v t a , temperature ( c) v out , output voltage (v) figure 7. output voltage vs. temperature 3.3 v version 50 ma 500 ma 300 ma t a , temperature ( c) v out , output voltage (v) figure 8. output voltage vs. temperature 5.0 v version 1.75 1.76 1.77 1.78 1.79 1.8 1.81 1.82 1.83 1.84 1.85 ? 40 ? 20 0 20 40 60 80 100 120 140 2.47 2.475 2.48 2.485 2.49 2.495 2.5 2.505 2.51 2.515 2.52 ? 40 ? 20 0 20 40 60 80 100 120 140 v do , dropout voltage (mv) t a , temperature ( c) figure 9. dropout voltage vs. temperature 1.8 v version 3.270 3.275 3.280 3.285 3.290 3.295 3.300 3.305 3.310 3.315 3.320 ? 40 ? 20 0 20 40 60 80 100 120 140 4.85 4.9 4.95 5 5.05 5.1 ? 40 ? 20 0 20 40 60 80 100 120 140 v out = 3.3 v v out = 5.0 v 0 100 200 300 400 500 600 700 800 900 0 20 40 60 80 100 120 140 0 50 100 150 200 250 300 350 400 0 20 40 60 80 100 120 140 v do , dropout voltage (mv) t a , temperature ( c) figure 10. dropout voltage vs. temperature 2.5 v version 50 ma 500 ma 300 ma v in = 2.9 v i out = 0 v in = 2.9 v i out = 0 v in = 5.4 v i out = 0 v in = 3.7 v i out = 0
ncp3337 http://onsemi.com 11 0 50 100 150 200 250 300 350 400 0 20 40 60 80 100 120 140 v do , dropout voltage (mv) t a , temperature ( c) figure 11. dropout voltage vs. temperature 3.3 v version 50 ma 500 ma 300 ma 0 50 100 150 200 250 300 350 0 20 40 60 80 100 120 140 v do , dropout voltage (mv) t a , temperature ( c) figure 12. dropout voltage vs. temperature 5.0 v version 50 ma 500 ma 300 ma 0 100 200 300 400 500 600 700 800 900 1000 0 20 40 60 80 100 120 140 i sc i pk t a , temperature ( c) i pk (ma), i sc (ma) figure 13. peak and short current vs. temperature i out (ma) (for specific values of i pk and i sc , please refer to figure 13) v out (v) figure 14. output voltage vs. output current i sc i pk 0.97 v out 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 t a , temperature ( c) i gnd , ground current (ma) figure 15. ground current vs. temperature 500 ma 300 ma 50 ma 0 2 4 6 8 10 12 0 0.1 0.2 0.3 0.4 0.5 i out , output current (a) figure 16. ground current vs. output current i gnd , ground current (ma) v in = 2.9 v v out = 1.8 v v in = 2.9 v v out = 1.8 v v in = 2.9 v v out = 1.8 v t a = 25 c
ncp3337 http://onsemi.com 12 figure 17. output current capability for the 1.8 v version v in , input voltage (v) i out , output current (a) f, frequency (hz) psrr, ripple rejection (db) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 ? 20 c ? 40 c 0 c 25 c 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 figure 18. output current capability for the 2.5 v version v in , input voltage (v) i out , output current (a) ? 20 c ? 40 c 0 c 25 c 0 10 20 30 40 50 60 70 80 90 100 100 1k 10k 100k 1m i out = 0.25 a i out = 0.5 a i out = 50 ma 0 10 20 30 40 50 60 70 80 90 i out = 0.25 a i out = 0.5 a i out = 50 ma f, frequency (hz) psrr, ripple rejection (db) figure 20. psrr vs. frequency adjustable version figure 21. psrr vs. frequency 2.5 v version 0 100 200 300 400 500 600 10 100 1k 10k 100k 1m noise density (nv/ figure 22. output noise density adjustable version c nr = 10 nf c nr = 0 nf 0 100 200 300 400 500 600 10 100 1k 10k 100k 1m c nr = 0 nf c nr = 10 nf noise density (nv/ hz ) f, frequency (hz) figure 23. output noise density 2.5 v version v in = 2.9 v v out = 1.8 v v in = 2.9 v v out = 2.5 v v in = 2.9 v +0.5 v pp modulation v out = 1.25 v t a = 25 c v in = 3.4 v +0.5 v pp modulation v out = 2.5 v t a = 25 c 100 1k 10k 100k 1m v in = 2.9 v v out = 2.5 v t a = 25 c v in = 2.9 v v out = 1.25 v t a = 25 c
ncp3337 http://onsemi.com 13 figure 24. power good activation figure 25. power good inactivation output current (ma) maximum esr ( ) figure 26. stability with esr vs. output current 0 5.0 10 15 500 400 300 200 100 0 unstable area stable area v in at data sheet test conditions, 25 c, 1 f capacitance 200 150 100 50 0 600 500 400 300 200 100 0 700 ja ( c/w) copper heat spreading area (mm 2 ) 1 oz cf 250 300 2 oz cf figure 27. dfn10 self ? heating thermal characterstics as a function of copper area on the pcb note: typical characteristics were measured with the same conditions as electrical characteristics.
ncp3337 http://onsemi.com 14 applications information reverse bias protection reverse bias is a condition caused when the input voltage goes to zero, but the output voltage is kept high either by a large output capacitor or another source in the application which feeds the output pin. normally in a bipolar ldo all the current will flow from the output pin to input pin through the pn junction with limited current capability and with the potential to destroy the ic. due to an improved architecture, the ncp3337 can withstand up to 7.0 v on the output pin with virtually no current flowing from output pin to input pin, and only negligible amount of current (tens of a) flowing from the output pin to ground for infinite duration. input capacitor an input capacitor of at least 1.0 f, any type, is recommended to improve the transient response of the regulator and/or if the regulator is located more than a few inches from the power source. it will also reduce the circuit?s sensitivity to the input line impedance at high frequencies. the capacitor should be mounted with the shortest possible track length directly across the regular?s input terminals. output capacitor the ncp3337 remains stable with any type of capacitor as long as it fulfills its 1.0 f requirement. there are no constraints on the mi nimum esr and it will remain stable up to an esr of 5.0 . larger capacitor values will improve the noise rejection and load transient response. noise reduction pin output noise can be greatly reduced by connecting a 10 nf capacitor (c nr ) between the noise reduction pin and ground (see figure 1). in applications where very low noise is not required, the noise reduction pin can be left unconnected. dropout voltage the voltage dropout is measured at 97% of the nominal output voltage. thermal considerations internal thermal limiting circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. this feature provides protection from a catastrophic device failure due to accidental overheating. this protection feature is not intended to be used as a substitute to heat sinking. the maximum power that can be dissipated, can be calculated with the equation below: p d t j(max) t a r ja (eq. 1) for improved thermal performance, contact the factory for the dfn package option. the dfn package includes an exposed metal pad that is specifically designed to reduce the junction to air thermal resistance, r ja . adjustable operation the output voltage can be set by using a resistor divider as shown in figure 2 with a range of 1.25 to 10 v. the appropriate resistor divider can be found by solving the equation below. the recommended current through the resistor divider is from 10 a to 100 a. this can be accomplished by selecting resistors in the k range. as result, the i adj * r2 becomes negligible in the equation and can be ignored. v out 1.25 * (1 r3 r2) i adj *r2 (eq. 2) power good operation the power good pin on the ncp3337 will produce a logic low when it drops below the nominal output voltage. refer to the electrical characteristics for the threshold values at which point the power good goes low. when the ncp3337 is above the nominal output voltage, the power good will remain at logic high. the external pullup resistor needs to be connected between v in and the power good pin. a resistor of approximately 100 k is recommended to minimize the current consumption. no pullup resistor is required if the power good output is not being used. the power good does not function during thermal shutdown and when the part is disabled.
ncp3337 http://onsemi.com 15 ordering information device nominal output voltage marking package shipping ? ncp3337mn180r2g 1.8 v p3337 180 dfn10 (pb ? free) 3000 / tape & reel NCP3337MN250R2G 2.5 v p3337 250 dfn10 (pb ? free) 3000 / tape & reel ncp3337mn330r2g 3.3 v p3337 330 dfn10 (pb ? free) 3000 / tape & reel ncp3337mn500r2g 5.0 v p3337 500 dfn10 (pb ? free) 3000 / tape & reel ncp3337mnadjr2g adj p3337 adj dfn10 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *please contact factory for other voltage options.
ncp3337 http://onsemi.com 16 package dimensions dfn10, 3x3, 0.5p case 485c ? 01 issue b 10x seating plane l d e 0.15 c a a1 e d2 e2 b 15 10 6 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.25 and 0.30 mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. 5. terminal b may have mold compound material along side edge. mold flashing may not exceed 30 microns onto bottom surface of terminal b. 6. details a and b show optional views for end of terminal lead at edge of package. ??? ??? ??? b a 0.15 c top view side view bottom view pin 1 reference 0.10 c 0.08 c (a3) c 10x 10x 0.10 c 0.05 c a b note 3 k 10x dim min max millimeters a 0.80 1.00 a1 0.00 0.05 a3 0.20 ref b 0.18 0.30 d 3.00 bsc d2 2.40 2.60 e 3.00 bsc e2 1.70 1.90 e 0.50 bsc l 0.35 0.45 l1 0.00 0.03 detail a k 0.19 typ 2x 2x l1 detail a bottom view (optional) *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 2.1746 2.6016 1.8508 0.5000 pitch 0.5651 10x 3.3048 0.3008 10x dimensions: millimeters on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. ncp3337/d the products described herein ncp3337, may be covered by one or more of the following u.s. patents; 5,920,184, 5,966,004, and 5 ,834,926 . there may be other patents pending. micro8 is a trademark of international rectifier. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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